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SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
ISSUE 1 SEPTEMBER 1995
1 1
BAT54 SERIES
1
7
1
1 3
2
3
2
3
3
2
2
3
BAT54 SINGLE L4Z
BAT54A COMMON ANODE L42
BAT54S SERIES L44
BAT54C COMMON CATHODE L43
Device Type
Pin Configuration Partmarking Detail
FEATURES: Low VF & High Current Capability APPLICATIONS: PSU, Mobile Telecomms & SCSI ABSOLUTE MAXIMUM RATINGS.
PARAMETER Continuous Reverse Voltage Forward Current Forward Voltage @ IF =10mA Repetitive Peak Forward Current Non Repetitive Forward Current t<1s Power Dissipation at Tamb=25C Storage Temperature Range JunctionTemperature SYMBOL VR IF VF I FRM I FSM Ptot Tstg Tj VALUE 30 200 400 300 600 330 -55 to +150 125 UNIT V mA mV mA mA mW C C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V(BR)R VF MIN. 30 TYP. 50 135 200 280 350 530 2.5 7.5 240 320 400 500 1000 4 10 5 MAX. UNIT V mV mV mV mV mV
A
CONDITIONS. IR=10A IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V f=1MHz,VR=1V switched from IF=10mA to IR=10mA RL=100, Measured at IR=1mA
Reverse Current Diode Capacitance Reverse Recover Time
IR CD trr
pF ns
Dual Device; For simultaneous continuous use Tj=100C. 3-4
BAT54 SERIES TYPICAL CHARACTERISTICS
1 100m 10m 1m 100 10 +125C +85C +25C 10m
1m
+125C +85C
100
10 +25C 0
0
Forward Voltage VF (V)
0.15
0.3
0.45
0.6
0.75
0.9
1
IF v VF Characteristics
15 330 270 10 180 5
IR v VR Characteristics
Reverse Voltage VR (V)
10
20
30
90
0
0
CT v VR Characteristics
Reverse Voltage VR (V)
10
20
30
0
0
TA - Ambient Temperature ( C)
50
100
150
PD v TA Characteristics
3-5

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